Micron Technology

Semiconductor

TDThinFilmsProcessDevelopmentEngineerDRAM

$95–135k ~AI est. Boise, Idaho, United States FULL TIME
Market Sentiment
HIGH DEMAND

Neural analysis suggests this role is
optimal for Mid+ candidates.

The Brief

“TD Thin Films Process Development Engineer DRAM at Micron Technology. Skills: Thin-film deposition, Process development, DRAM devices. Develop thin-film deposition techniques. Incorporate thin-film deposition techniques”

What You'll Achieve.

Deliver robust solutions; Deliver scalable solutions

Industry & Context.

Semiconductor
Problems you'll solve

Model-based problem solving; Troubleshooting; Feasibility issues resolution

What They're Looking For.

Must Have

Master's degree or PhD, 2+ years of experience, Thin-film deposition experience, Process troubleshooting experience, ALD, epitaxy, or plasma deposition knowledge, Data-driven methods experience, DOE and SPC experience, Ability to work independently, Communicate technical results clearly

Nice to Have

5+ years experience, Semiconductor thin-film deposition experience, Semiconductor manufacturing experience, AI application experience, Coding application experience, Data science application experience, Automate and improve process development, Deliver results through teamwork, Cross-functional teamwork experience

What You'll Do.

Develop thin-film deposition techniques

Incorporate thin-film deposition techniques

Build High Aspect Ratio Advanced DRAM features

Relate on-wafer performance to hardware

Lead multi-functional initiatives

Ensure projects meet technical requirements

Ensure projects meet program benchmarks

Partner with suppliers

Partner with internal teams

Influence technical roadmaps

Influence strategic roadmaps

Implement development timelines

Communicate status updates to leadership

Engage with technical challenges

Resolve feasibility issues

How You'll Work.

Team & Collaboration

Multi-functional initiatives; Cross-functional teamwork

Communication Scope

Communicate technical results

Process & Methodology

Development timelines

Full Job Description

**Our vision is to transform how the world uses information to enrich life for _all_. ** Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. ### Department Introduction: We are part of Micron’s Advanced DRAM Technology Development organization, where we push the limits of memory technology every day. Our team works at the intersection of materials science, hardware, and manufacturing to bring next-generation DRAM devices to life. ### ### Position Overview: This role is crucial to building the thin-film foundations of advanced DRAM devices. As a Process Development Engineer passionate about dielectric deposition, you will own key processes, influence technical direction, and work hands-on with innovative tools to deliver robust, scalable solutions. ## ## Responsibilities: * Develop and incorporate new thin-film deposition techniques to build High Aspect Ratio Advanced DRAM features. * Relate on-wafer performance to hardware performance to improve film metrics like uniformity, conformity, and electrical quality. * Lead multi-functional initiatives to ensure projects meet technical requirements and program benchmarks. * Partner with suppliers and internal teams to influence technical and strategic project roadmaps. * Implement development timelines and communicate status updates to leadership using model-based problem solving. * Proactively engage with technical challenges to resolve feasibility issues before they impact production. ## ## Minimum Qualifications: * Master’s degree in Physics, Chemistry, Chemical Engineering, Materials Science, or a related field with 2+ years of experience, or a PhD with relevant research. * Hands-on experience with thin-film deposition and process troubleshooting. * Foundational knowledge of ALD, epitaxy, or plasma-based deposition. * Experience using data-driven methods

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