Micron Technology

Semiconductor

StaffEngineer,AdvDRAMPI

$200–320k ~AI est. Boise, Idaho, United States FULL TIME
Market Sentiment
HIGH DEMAND

Neural analysis suggests this role is
optimal for Senior candidates.

The Brief

“Staff Engineer, Adv DRAM PI at Micron Technology. Skills: Memory scaling, Process integration, Device physics. Lead technology development activities. Enable vertically stacked memory device”

What You'll Achieve.

Improve product quality; Improve reliability; Improve manufacturability

Industry & Context.

Semiconductor
Problems you'll solve

Resolve complex issues; Analyze failure mechanisms

What They're Looking For.

Must Have

MS or PhD, 3+ years industry experience, Semiconductor process integration experience, Functional knowledge semiconductor physics, Functional knowledge materials science, Meticulous experiment design experience, Data analysis experience, Statistical applications experience

Nice to Have

Detailed knowledge DRAM, Detailed knowledge NAND, Experience driving cross-functional teams, Complex project management experience, Understanding alternative memory technologies

What You'll Do.

Lead technology development activities

Enable vertically stacked memory device

Optimize process flows

Develop creative solutions

Improve product quality

Improve manufacturability

Design and execute experiments

Evaluate process changes

Optimize process changes

Evaluate equipment changes

Optimize equipment changes

Evaluate material changes

Optimize material changes

Analyze parametric data

Evaluate failure mechanisms

Apply fundamental principles

Communicate technical findings

Drive team to implement solutions

How You'll Work.

Team & Collaboration

Cross-functional teams; Design teams; Probe teams; Yield enhancement teams

Communication Scope

Technical findings

Process & Methodology

Project management

Full Job Description

**Our vision is to transform how the world uses information to enrich life for _all_. ** Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. We are part of Micron’s Technology Development organization, where advanced ideas become manufacturable technologies. You will join a team of world-class engineers in our industry-leading 300mm R&D facility, focusing on technology that enables the future of memory scaling! This role bridges the gap between device physics, materials science, and process integration to solve complex challenges specific to advanced memory technology. This is a place for curiosity, experimentation, and real impact as we build solutions that make breakthroughs in artificial intelligence possible. **Responsibilities** Lead technology development activities to enable the first vertically stacked memory device, focusing on components like charge storage devices and thin-film transistors. Optimize process flows and develop creative solutions to improve product quality, reliability, and manufacturability. Collaborate with cross-functional teams, including design, probe, and yield enhancement, to resolve complex performance and yield issues. Design and execute experiments in the R&D fab to evaluate and optimize process, equipment, and material changes. Analyze inline, parametric, and probe data to evaluate failure mechanisms and apply fundamental principles for device optimization. Communicate sophisticated technical findings and drive the team to implement actionable solutions. **Minimum Qualifications** MS or PhD in Physics, Materials Science, Electrical Engineering, or a related technical field. 3+ years of relevant industry experience in semiconductor process integration or development. Strong functional knowledge of semiconductor device physics and materials science. Proven experience

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