SrEngineer,AdvDRAMPI

**Our vision is to transform how the world uses information to enrich life for _all_. ** Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. We are part of Micron’s Technology Development organization, where advanced ideas become manufacturable technologies. You will join a world-class team in our industry-leading R&D facility, focusing on novel solutions for scaling, performance, and power in next-generation layered memory technology. This role bridges the gap between device physics and materials science to define the future of memory technology. This is a place for curiosity, experimentation, and real impact as we build solutions for everything from virtual reality to breakthroughs in artificial intelligence. Responsibilities * Lead technology integration activities to enable brand new layered memory devices, focusing on components like charge storage devices and thin-film transistors (TFTs). * Develop and integrate new device architectures, moving concepts from paper through to silicon productization. * Optimize process flows and implement creative solutions to meet complex product performance and reliability requirements. * Build and complete experiments in the R&D fab by collaborating with multi-functional teams, including build, yield improvement, and probe. * Analyze inline, defect, and parametric data to evaluate failure mechanisms and drive continuous yield improvement. * Communicate complex technical findings and actionable solutions to both technical and non-technical audiences. ### ### Minimum Qualifications * MS or PhD in Physics, Materials Science, Electrical Engineering, or a related technical field. * 10+ years of relevant industry experience in semiconductor process integration or advanced node development. * Strong functional knowledge of semiconductor device physics and meticulous e