Micron Technology

Technology

Principal/Senior/Engineer,TCADDRAM

$12000–18000k ~AI est. Hiroshima, Japan FULL TIME
Market Sentiment
HIGH DEMAND

Neural analysis suggests this role is
optimal for Senior candidates.

The Brief

“Principal / Senior / Engineer, TCAD DRAM at Micron Technology. Skills: TCAD simulation, Semiconductor devices, Device physics. Develop TCAD simulations. Apply TCAD simulations”

Industry & Context.

Technology
Problems you'll solve

Parametric analysis; Physical insight extraction

What They're Looking For.

Must Have

2+ years semiconductor device simulation, 2+ years technology development, Semiconductor device physics background, Numerical simulation methods background

Nice to Have

TCAD tools hands-on experience, Synopsys Sentaurus experience, Silvaco Atlas experience, Parametric analysis ability, Extract physical insight ability, Correlate TCAD with experimental data experience, Learn new device architectures capability, Learn new technologies capability, Scripting languages experience, Programming languages experience, Python experience, Tcl experience, C++ experience, Simulation automation experience, Data analysis experience, Advanced physical modeling knowledge, Trap-related effects knowledge, Variability knowledge, Reliability knowledge, Quantum effects knowledge, Process integration understanding, Fabrication flows understanding, 3D device simulations experience, Large-scale simulation data handling experience, AI techniques for parameter extraction experience, AI techniques for model calibration experience, AI techniques for sensitivity analysis experience, AI techniques for surrogate modeling experience, Combine TCAD, simulation data, AI experience

What You'll Do.

Develop TCAD simulations

Apply TCAD simulations

Analyze semiconductor devices

Build device structures

Define physical models

Perform parametric studies

Correlate simulation results

Clarify physical mechanisms

Investigate process variations impacts

Investigate material properties impacts

Investigate defects impacts

Investigate interface states impacts

Provide interpretation

Provide predictive simulation results

Propose TCAD methodologies

Validate TCAD methodologies

Propose simulation flows

Validate simulation flows

Propose calibration strategies

Validate calibration strategies

Automate simulation workflows

Automate data analysis

How You'll Work.

Team & Collaboration

Device integration teams; Process development teams; Product engineering teams; E-characterization teams

Communication Scope

Written communication; Verbal communication

Full Job Description

**Our vision is to transform how the world uses information to enrich life for _all_. ** Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. **Our vision is to transform how the world uses information to enrich life for _all_.** Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. As a TCAD Engineer in the DRAM Device Technology group at Micron Technology, Inc., you will work with an industry-leading team to model, simulate, and understand advanced semiconductor devices and processes for future memory products. You will be responsible for physics-based device simulation, supporting technology development by providing quantitative insight into device behavior, variability, and reliability through TCAD tools. **Responsibilities and Tasks** * Develop and apply TCAD simulations to analyze advanced semiconductor devices including DRAM access devices, CMOS devices, diodes, and resistive elements. * Build 2D/3D device structures, define physical models (transport, recombination, traps, mobility, quantum effects, etc.), and perform parametric studies to support device and process development. * Correlate TCAD simulation results with electrical characterization data to clarify physical mechanisms behind performance, variability, and reliability trends. * Investigate impacts of process variations, material properties, defects, and interface states on device characteristics. * Support development teams by providing physics-based interpretation and predictive simulation results for technology decisions. * Propose and validate new TCAD methodologies, simulation flows, and calibration strategies for next-generation memory technologies. * Collaborate c

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