Renesas Electronics

Technology

PrincipalMediumVoltagePowerMOSFETDesignEngineer

$150000–220000k ~AI est. Seoul, South Korea FULL TIME
Market Sentiment
HIGH DEMAND

Neural analysis suggests this role is
optimal for mid candidates.

The Brief

“Principal Medium Voltage Power MOSFET Design Engineer at Renesas Electronics. Skills: Power MOSFET design, Semiconductor device physics, TCAD modeling. Design and develop new power MOSFET devices. Develop device models for simulation”

Industry & Context.

Technology
Problems you'll solve

Root cause analysis

What They're Looking For.

Must Have

5+ years of experience in power electronics, Experience with high-voltage power semiconductor devices, Experience with device physics and semiconductor device modeling, Experience with TCAD tools, Experience with device characterization and measurement, Experience with semiconductor fabrication processes, Experience with packaging technologies, Experience with reliability testing, Experience with power electronics applications, Experience with CAD tools

Nice to Have

Experience with advanced packaging technologies, Experience with GaN or SiC devices, Experience with high-frequency power converters, Experience with automotive or industrial applications

What You'll Do.

Design and develop new power MOSFET devices

Develop device models for simulation

Optimize device performance and reliability

Collaborate with fabrication and packaging teams

Perform device characterization and testing

Analyze test data and identify root causes

Develop and implement new fabrication processes

Evaluate new packaging technologies

Support product development teams

Stay current with industry trends

How You'll Work.

Team & Collaboration

Cross-functional teams; Fabrication teams; Packaging teams; Product development teams

Full Job Description

Job Summary: We are looking for a highly motivated and skilled engineer to join our Medium Voltage (MV) Power Trench MOSFET Design Team. The successful candidate will play a key role in the design and development of next-generation MV shielded-gate trench MOSFET technologies. This role involves close collaboration with process integration team, application team , marketing team and external foundry partners to drive innovation, optimize performance, and accelerate product industrialization. Key Responsibilities: * Define and establish key process modules for next-generation MV shielded-gate trench MOSFET technology * Develop TCAD simulation decks and propose advanced device design concepts * Analyze wafer-level electrical test results and package-level performance data for each development iteration * Lead yield improvement activities and support technology transfer to mass production * Contribute to the development of derivative products based on established and mature technology platforms ## Qualifications * Ph.D. (preferred) or M.S. in Electrical Engineering, Physics, or a related field * Up to 15 years of experience in power semiconductor device or process development, preferably with a focus on Si-based MV shielded-gate trench MOSFETs * Solid understanding of power device physics and semiconductor fabrication processes * Hands-on experience with TCAD tools and simulation-based device analysis * Intermediate-level proficiency in both written and spoken English ## Additional Information Renesas is an embedded semiconductor solution provider driven by its Purpose ‘To Make Our Lives Easier.’ As the industry’s leading expert in embedded processing with unmatched quality and system-level know-how, we have evolved to provide scalable and comprehensive semiconductor solutions for automotive, industrial, infrastructure, and IoT industries based on the broadest product portfolio, including High Performance Computing, Embedded Processing, Analog & Connectivity, and Power.

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