Intern_DesignEngineer

**Our vision is to transform how the world uses information to enrich life for** _**all**_**.** Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. Our vision is to transform how the world uses information to enrich life for all. Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. **department Introduction** The Non-Volatile NAND Design Engineering group is responsible for the design and optimization of analog, digital and mixed-signal circuits enabling advanced NAND Flash memory products. Close collaboration with cross-functional teams ensures scalable, manufacturable, and reliable solutions across technology nodes. **Role Overview** As an intern in the NVE Design Engineering at Micron Semiconductor Italia, you will contribute to the development of memory products that are best-in-class, using your specialized knowledge. **Responsibilities** Responsibilities include, but not limited to: * Support for the design, implementation, and validation of analog and mixed‑signal circuits used in NAND Flash. The role spans the complete design lifecycle. * Contribute to design and develop analog and mixed‑signal circuits such as Charge pumps, amplifiers, voltage regulators, data converters (ADC/DAC), bandgap references, sensor interfaces, and power management blocks. * Perform transistor‑level design and optimization to meet performance, power, area, noise, and reliability targets. * Run and analyze circuit simulations (DC, AC, transient, noise, Monte Carlo, corners) to verify functionality and robustness across process, voltage, and temperature variations. * Contribute to validation design performance and functionality by running block level simu