AdvancedDRAMProcessIntegrationEngineer

**Our vision is to transform how the world uses information to enrich life for _all_. ** Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. We are part of Micron’s Technology Development organization, where world-class engineers work in an industry-leading 300mm R&D facility to enable future memory scaling. In this role, you will focus on the performance and manufacturability concerning the next-generation memories developed by Micron, specifically focusing on advanced layered memory technology. Your work will bridge the gap between process development, simulation, and characterization to solve complex integration and circuit challenges. This is a place where your expertise in semiconductor device physics will drive real impact in the relentless pursuit of innovation! Responsibilities * Lead technology integration activities to enable the manufacturability of innovative Advanced DRAM technology. * Collaborate with cross-functional teams including build, product engineering, and advanced mask groups to resolve yield and margin issues. * Design and manage experiments within the R&D fab to optimize process flows and meet product requirements. * Analyze inline, defect, and probe data to improve device performance, reliability, and process margins. * Develop creative solutions and summarized action plans to address sophisticated technical problems. * Partner with simulation and modeling groups to refine device components like charge storage and thin-film transistors (TFTs). Minimum Qualifications * Bachelor’s degree in Engineering, Physics, or a related technical field. * 5+ years of relevant proven experience. * Significant experience with semiconductor process integration and memory technologies (DRAM or NAND). * Strong foundation in semiconductor device physics and data analysis using DOE or statistica